SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–C

文件：133.68 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

400V N-Channel MOSFET

Features • 19.5A, 400V, RDS(on) = 0.22 Ω @ VGS = 10 V • Low gate charge ( typical 60 nC) • Low Crss ( typical 45 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：718.01 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–C

文件：133.68 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–C

文件：118.01 Kbytes 页数：5 Pages

ONSEMI

安森美半导体