首页 >HGTG20N120CN>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
HGTG20N120CN | 63A, 1200V, NPT Series N-Channel IGBT 63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Generalpurposeinverters | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | |||
Insulated-GateBipolarTransistorinaTO-3PPlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
1200V,20ATrenchIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
1200V,20ATrenchIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
34A,1200VN-ChannelIGBT Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
63A,1200V,NPTSeriesN-ChannelIGBT 63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
N-ChannelEnhancementInsulatedGateBipolarTransistor Features •Lowsaturationvoltage,Vce(on)(typ)=2.3V@Vge=15V •Highinputimpedance •Fieldstoptrenchtechnologyoffersuperior conductionandswitchingperformances, •Highspeedswitching Applications •InductionheatingandMicrowaveoven •Softswitchingapplications | HuashanHuashan Electronic Devices Co 华汕电子器件 | |||
34A,1200VN-ChannelIGBT Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
H&MNPTIGBTsofferlowerlossesandhigherenergy | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
ReverseConductingIGBTwithmonolithicbodydiode Features: •PowerfulmonolithicBodyDiodewithverylowforwardvoltage •Bodydiodeclampsnegativevoltages •TrenchandFieldstoptechnologyfor1200Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior •NPTtechnologyoffers | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
HighVoltageIGBT HighVoltageIGBT ShortCircuitSOACapabilitySquareRBSOA Features ●NPTIGBTtechnology ●highswitchingspeed ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●Internationalstandardp | IXYS IXYS Integrated Circuits Division |
详细参数
- 型号:
HGTG20N120CN
- 制造商:
INTERSIL
- 制造商全称:
Intersil Corporation
- 功能描述:
63A, 1200V, NPT Series N-Channel IGBT
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Intersil |
08+(pbfree) |
TO-247 |
8866 |
询价 | |||
23+ |
N/A |
85800 |
正品授权货源可靠 |
询价 | |||
INTERSIL |
23+ |
TO-247 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
INTERSIL |
23+ |
TO-247 |
10000 |
公司只做原装正品 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INTERSIL |
22+ |
TO-247 |
6000 |
十年配单,只做原装 |
询价 | ||
FAIRCHILD |
TO-247 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
INTERSIL |
23+ |
TO-247 |
6000 |
原装正品,支持实单 |
询价 | ||
INTERSIL |
23+ |
TO-247 |
8400 |
专注配单,只做原装进口现货 |
询价 | ||
RENESAS-瑞萨. |
24+25+/26+27+ |
TO-247-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
相关规格书
更多- HGTG20N120CND
- HGTG20N50C1D
- HGTG20N60A4_NL
- HGTG20N60A4D_09
- HGTG20N60B3_NL
- HGTG20N60B3D
- HGTG20N60C3
- HGTG20N60C3R
- HGTG24N60D1D
- HGTG27N120BN
- HGTG27N60C3DR
- HGTG2ON60C3DR
- HGTG30N120D2
- HGTG30N60A4D
- HGTG30N60B3_NL
- HGTG30N60B3D_04
- HGTG30N60C3
- HGTG30N60C3D_NL
- HGTG32N60E2R4511
- HGTG34N100E2
- HGTG40N60A4
- HGTG40N60B3_NL
- HGTG40N60B3R4729
- HGTG40N60C3_R4752
- HGTG5N120BND
- HGTG7N60A4D
- HGTG7N60A4D_Q
- HGTH12N40C1D
- HGTH12N40E1
- HGTH12N40EID
- HGTH12N50C1D
- HGTH12N50E1
- HGTH20N40C1
- HGTH20N40E1
- HGTH20N50C1
- HGTH20N50E1D
- HGTH32N60E2
- HGTIS20N60C3RS
- HGTP10N120BNFS
- HGTP10N40C1D
- HGTP10N40E1D
- HGTP10N40F1D
- HGTP10N50C1D
- HGTP10N50E1D
- HGTP10W40C1
相关库存
更多- HGTG20N120E2
- HGTG20N60A4
- HGTG20N60A4D
- HGTG20N60B3
- HGTG20N60B3_Q
- HGTG20N60B3D_Q
- HGTG20N60C3D
- HGTG24N60D1
- HGTG24N60DID
- HGTG27N120BN_04
- HGTG27N60C3R
- HGTG30N120CN
- HGTG30N60A4
- HGTG30N60B3
- HGTG30N60B3D
- HGTG30N60B3D_Q
- HGTG30N60C3D
- HGTG32N60E2
- HGTG32N60ER3431
- HGTG40N6
- HGTG40N60B3
- HGTG40N60B3_Q
- HGTG40N60C3
- HGTG40N60C3R
- HGTG7N60A4
- HGTG7N60A4D_05
- HGTH12N40C1
- HGTH12N40CID
- HGTH12N40E1D
- HGTH12N50C1
- HGTH12N50CID
- HGTH12N50EID
- HGTH20N40C1D
- HGTH20N40E1D
- HGTH20N50E1
- HGTH20N50EID
- HGTIE50N60E2HB
- HGTP10N120BN
- HGTP10N40C1
- HGTP10N40E1
- HGTP10N40EID
- HGTP10N50C1
- HGTP10N50E1
- HGTP10N50F1D
- HGTP11N120CN