首页 >HGTG5N120BND>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
HGTG5N120BND | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
HGTG5N120BND | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
HGTG5N120BND | 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-247-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT NPT 1200V 21A TO247-3 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
5A,1200VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC5N120provideexcellentRDS(ON),lowgatecharge andoperationwithlowgatevoltages.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications. FEATURES0 *RDS(ON)≤3.1Ω@VGS=10V,ID=2.5A *LowReverseTransferCapacitance *FastSwitchingCapabilit | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
25A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG5N120CND,HGTP5N120CNDandHGT1S5N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
21A,1200V,NPTSeriesN-ChannelIGBTs TheHGTP5N120BNandtheHGT1S5N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateco | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
25A,1200V,NPTSeriesN-ChannelIGBT TheHGTP5N120CNandHGT1S5N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
25A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG5N120CND,HGTP5N120CNDandHGT1S5N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
ShortCircuitRatedIGBT GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswhe | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
ShortCircuitRatedIGBT GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-channel1200V-2.8廓-4.4A-TO-220Zener-protectedSuperMESHTMPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPTN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODES | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |
产品属性
- 产品编号:
HGTG5N120BND
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装:
卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带
- IGBT 类型:
NPT
- 不同 Vge、Ic 时 Vce(on)(最大值):
2.7V @ 15V,5A
- 开关能量:
450µJ(开),390µJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
22ns/160ns
- 测试条件:
960V,5A,25 欧姆,15V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-247-3
- 供应商器件封装:
TO-247-3
- 描述:
IGBT NPT 1200V 21A TO247-3
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2019+全新原装正品 |
TO247 |
8950 |
BOM配单专家,发货快,价格低 |
询价 | ||
onsemi/安森美 |
新批次 |
TO-247 |
4500 |
询价 | |||
FSC |
2020+ |
TO-3P |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ONSemi |
1939 |
TO-247 |
10200 |
全新原装公司现货
|
询价 | ||
ON/安森美 |
21+ |
TO-247 |
6000 |
原装正品 |
询价 | ||
ON |
22+ |
TO-247 |
9000 |
只做原装 假一赔十 |
询价 | ||
ON/安森美 |
2113+ |
TO-247-3 |
4050 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Fairchil |
22+ |
TO-247 |
7295 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
仙童 |
20+ |
NA |
6800 |
询价 | |||
ON/安森美 |
2021+ |
TO-247 |
9000 |
原装现货,随时欢迎询价 |
询价 |
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