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HGTP10N120BN	文件：217.6 Kbytes Page：8 Pages	35A, 1200V, NPT Series N-Channel IGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP10N120BN	文件：81.67 Kbytes Page：7 Pages	35A, 1200V, NPT Series N-Channel IGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP10N120BN	文件：201.1 Kbytes Page：8 Pages	35A, 1200V, NPT Series N-Channel IGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP10N120BN	文件：100 bytes Page：1 Pages	包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带封装/外壳：TO-220-3 类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT 1200V 35A 298W TO220AB	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
10N120BN	文件：81.67 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
10N120BN	文件：217.6 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
10N120BND	文件：82.69 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
10N120BND	文件：110.92 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
BRG10N120D	文件：770.08 Kbytes Page：6 Pages	Insulated-GateBipolarTransistorinaTO-3PPlasticPackage	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司	FOSHAN
HGTG10N120BN	文件：217.6 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG10N120BN	文件：81.67 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG10N120BN	文件：201.1 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG10N120BND	文件：110.92 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG10N120BND	文件：82.69 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HM10N120T	文件：1.25182 Mbytes Page：8 Pages	1200V/10ATrenchFieldStopIGBT	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
MPCK10N120A	文件：329.45 Kbytes Page：5 Pages	ZeroReverseRecoveryCurrent Features ZeroReverseRecoveryCurrent ZeroForwardRecoveryVoltage Temperature-independentSwitchingBehavior PositiveTemperatureCoefficientonVF High-speedswitchingpossible Highsurgecurrentcapability Applications SwitchModePowerSupply(SMPS) MotorDrives 	FS First Silicon Co., Ltd	FS
SCT10N120	文件：791.79 Kbytes Page：14 Pages	HighvoltageDC-DCconverters	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
SCT10N120AG	文件：238.62 Kbytes Page：14 Pages	Automotive-gradesiliconcarbidePowerMOSFET1200V,12A,520mΩ(typ.,TJ=150°C)inanHiP247package Features •AEC-Q101qualified •Verytightvariationofon-resistancevs.temperature •Veryhighoperatingtemperaturecapability(TJ=200°C) •Veryfastandrobustintrinsicbodydiode •Lowcapacitance Applications •Motordrives •EVchargers •HighvoltageDC-DCconverters •Swi	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
SGH10N120RUF	文件：456.93 Kbytes Page：7 Pages	ShortCircuitRatedIGBT GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
SGH10N120RUFD	文件：511.24 Kbytes Page：8 Pages	ShortCircuitRatedIGBT GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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产品属性

产品编号：
HGTP10N120BN
制造商：
onsemi
类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
IGBT 类型：
NPT
不同 Vge、Ic 时 Vce(on)（最大值）：
2.7V @ 15V，10A
开关能量：
320µJ（开），800µJ（关）
输入类型：
标准
25°C 时 Td（开/关）值：
23ns/165ns
测试条件：
960V，10A，10 欧姆，15V
工作温度：
-55°C ~ 150°C（TJ）
安装类型：
通孔
封装/外壳：
TO-220-3
供应商器件封装：
TO-220-3
描述：
IGBT 1200V 35A 298W TO220AB

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市金华微盛电子有限公司	HGTP10N120BN	FAIRCHILD	19+	TO220	22500		询价
深圳市浩睿泽电子科技有限公司	HGTP10N120BN	onsemi/安森美	新批次	TO-220	4500		询价
深圳市高捷芯城科技有限公司	HGTP10N120BN	onsemi(安森美)	23+	TO-220	942	原厂订货渠道,支持BOM配单一站式服务	询价
深圳市昌和盛利电子有限公司	HGTP10N120BN	FAIRCHILD原装正品专卖	23+	TO-220	59526	专注原装正品现货特价中量大可定	询价
贸泽芯城（深圳）电子科技有限公司	HGTP10N120BN	FAIRCHILD/仙童	21+	TO220	30000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市坤融电子科技有限公司	HGTP10N120BN	FAIRCHILD/仙童	2022+	TO220	780	原厂授权代理价格绝对优势	询价
深圳市慧业盛科技有限公司	HGTP10N120BN	ONN	23+	N/A	4000	原装原装原装哈	询价
深圳市博浩通科技有限公司	HGTP10N120BN	FAIRCHIL	23+	TO-220	8600	全新原装现货	询价
深圳市星佑电子有限公司	HGTP10N120BN	仙童	06+	TO-220	5000	原装库存	询价
深圳市卓越微芯电子有限公司	HGTP10N120BN	FSC	2020+	TO-220	3227	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多HGTP10N120BN供应商更新时间2024-4-30 16:04:00

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