丝印：SCT10N120AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package

Features • AEC-Q101 qualified • Very tight variation of on-resistance vs. temperature • Very high operating temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Motor drives • EV chargers • High voltage DC-DC converters • Swi

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STMICROELECTRONICS

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汽车级碳化硅功率MOSFET，1200 V、12 A、520 mOhm（典型值，TJ = 150 C），HiP247封装

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC materia • AEC-Q101 qualified \n• Very tight variation of on-resistance vs. temperature \n• Very high operating temperature capability (TJ = 200 °C) \n• Very fast and robust intrinsic body diode \n• Low capacitance;

ST

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Short Circuit Rated IGBT

General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wher

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FAIRCHILD

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Short Circuit Rated IGBT

General Description Fairchilds RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters w

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FAIRCHILD

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SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF (Per Leg) = 1.27 V (typ.) (3) Low total capacitive charge: Qc (Per Leg) = 30 nC (typ.) (4) Low reverse curre

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TOSHIBA

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