Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

文件：770.08 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

绝缘栅双极型晶体管

BlueRocket

蓝箭电子

35A, 1200V, NPT Series N-Channel IGBT

The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

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FAIRCHILD

仙童半导体

35A, 1200V, NPT Series N-Channel IGBT

The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

文件：81.67 Kbytes 页数：7 Pages

INTERSIL

35A, 1200V, NPT Series N-Channel IGBT

The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

文件：201.1 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体