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HGTP5N120BND中文资料PDF规格书
HGTP5N120BND规格书详情
The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49306.
Features
• 21A, 1200V, TC = 25°C
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
产品属性
- 型号:
HGTP5N120BND
- 功能描述:
IGBT 晶体管 21a 1200V IGBT NPT Series N-Ch
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集电极—发射极最大电压
- VCEO:
650 V
- 集电极—射极饱和电压:
2.3 V
- 栅极/发射极最大电压:
20 V 在25
- C的连续集电极电流:
150 A
- 栅极—射极漏泄电流:
400 nA
- 功率耗散:
187 W
- 封装/箱体:
TO-247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FSC |
2020+ |
TO220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ON/安森美 |
23+ |
TO-220 |
6000 |
原装正品,支持实单 |
询价 | ||
ON/安森美 |
22+ |
SMD |
12800 |
本公司只做进口原装!优势低价出售! |
询价 | ||
onsemi(安森美) |
23+ |
TO220AB3 |
6000 |
询价 | |||
FAIRCHILD/仙童 |
24+ |
TO220 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
FSC |
2020+ |
TO220 |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
INF |
2020+ |
TO-220 |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
ON |
21+ |
TO-220 |
56000 |
公司进口原装现货 批量特价支持 |
询价 | ||
ON |
2023+ |
TO220 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
ON/安森美 |
20+ |
SMD |
800 |
原装现货 |
询价 |