Short Circuit Rated IGBT

General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters whe

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FAIRCHILD

仙童半导体

Short Circuit Rated IGBT

General Description Fairchilds RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters w

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FAIRCHILD

仙童半导体

Short Circuit Rated IGBT

ONSEMI

安森美半导体

N-channel 1200V - 2.8廓 - 4.4A - TO-220 Zener - protected SuperMESHTM Power MOSFET

文件：186.55 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=4.4A@ TC=25℃ · Drain Source Voltage -VDSS= 1200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

NPT N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODES

文件：288.53 Kbytes 页数：3 Pages

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