HGTG20N120CN中文资料INTERSIL数据手册PDF规格书

63A, 1200V, NPT Series N-Channel IGBT

The HGTG20N120CN is aNon-PunchThrough (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on

state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

特性 Features

• 63A, 1200V, TC= 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ= 150oC

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated