40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

文件：179.52 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

文件：135.08 Kbytes 页数：6 Pages

INTERSIL

40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately • 40A, 600V at TC = 25℃\n• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC\n• Short Circuit Rated\n• Low Conduction Loss\n• Hyperfast Anti-Parallel Diode;

Renesas

瑞萨

600V，PT IGBT

HGTG20N60B3D 是一款第三代 MOS 门极高电压开关器件，组合了 MOSFET 和双极晶体管的最佳特性。此器件具有 MOSFET 的高输入阻抗，以及双极晶体管的低导通状态损耗。低得多的导通状态电压降在 25°C 和 150°C 之间仅存在少量变化。此 IGBT 适用于低导通损耗至关重要的、在中等频率下运行的多种高电压开关应用，如： 交流和直流电机控制、电磁阀电源和驱动器、继电器和接触器。 •40A、600 V，TC=25°C\n•典型下降时间： 150°C 时为 140 ns\n•短路额定值\n•低导通损耗\n•超快反向并联二极管;

ONSEMI

安森美半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 40A 165W TO247

ONSEMI

安森美半导体