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HGTG20N60B3D中文资料40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode数据手册Renesas规格书

厂商型号 |
HGTG20N60B3D |
参数属性 | HGTG20N60B3D 封装/外壳为TO-247-3;包装为卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带;类别为分立半导体产品的晶体管-UGBT、MOSFET-单;产品描述:IGBT 600V 40A 165W TO247 |
功能描述 | 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
封装外壳 | TO-247-3 |
制造商 | Renesas Renesas Technology Corp |
中文名称 | 瑞萨 瑞萨科技有限公司 |
数据手册 | |
更新时间 | 2025-9-26 22:59:00 |
人工找货 | HGTG20N60B3D价格和库存,欢迎联系客服免费人工找货 |
HGTG20N60B3D规格书详情
描述 Description
The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25℃ and 150℃. The diode used in anti-parallel with the IGBT is the
RHRP3060.
特性 Features
• 40A, 600V at TC = 25℃
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC
• Short Circuit Rated
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
技术参数
- 产品编号:
HGTG20N60B3D
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装:
卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带
- 不同 Vge、Ic 时 Vce(on)(最大值):
2V @ 15V,20A
- 开关能量:
475µJ(开),1.05mJ(关)
- 输入类型:
标准
- 工作温度:
-40°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-247-3
- 供应商器件封装:
TO-247-3
- 描述:
IGBT 600V 40A 165W TO247
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO247 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
FSC |
23+ |
NA |
20000 |
全新原装假一赔十 |
询价 | ||
INTERSIL |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
FAIRCHIL |
147 |
TO-247 |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
FAIRCHILD/仙童 |
16+ |
TO-247 |
1 |
询价 | |||
FAIRCHILD |
23+ |
TO-247 |
9526 |
询价 | |||
Freescale(飞思卡尔) |
24+ |
标准封装 |
15663 |
我们只是原厂的搬运工 |
询价 | ||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
FAIRCHILD/仙童 |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 |