Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A (Min.) • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP110/111/112

文件：50 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

文件：269.51 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

文件：153.15 Kbytes 页数：3 Pages

boca

博卡

PLASTIC POWER TRANSISTORS

Intended for use in Medium Power Linear and Switching Applications

文件：271.16 Kbytes 页数：3 Pages

CDIL

Silicon Power darlington Complementary transistors

文件：97.94 Kbytes 页数：2 Pages

Central

Plastic Medium-Power Complementary Silicon Transistor

TEST SPECIFICATION Plastic Medium-Power Complementary Silicon Transistor

文件：49 Kbytes 页数：1 Pages

FCI

富加宜

PNP Epitaxial Silicon Darlington Transistors

Features • High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.) • Low Collector-Emitter Saturation Voltage • Complementary to TIP110/111/112 • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designat RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating

文件：169.39 Kbytes 页数：1 Pages

MCC

POWER TRANSISTORS(2.0A,60-100V,50W)

文件：146.97 Kbytes 页数：3 Pages

MOSPEC

统懋

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

文件：269.51 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Darlington Power Transistors (PNP)

Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

文件：194.97 Kbytes 页数：4 Pages

TAITRON