| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TIP115 | POWER TRANSISTORS(2.0A,60-100V,50W)
| MOSPEC MOSPEC |  | |
TIP115 | DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
| MotorolaMotorola, Inc 摩托罗拉 |  | |
TIP115 | Plastic Medium-Power Complementary Silicon Transistors PlasticMedium-PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain− hFE=2500(Typ)@IC =1.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min) | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
TIP115 | PNP SILICON POWER DARLINGTONS PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewith TIP110,TIP111andTIP112 ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof500at4V,2A | POINNPower Innovations Ltd Power Innovations Ltd |  | |
TIP115 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheTIP110andTIP112aresiliconEpitaxial-BaseNPNtransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-220plasticpackage.Theyareintentedforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP115andTIP117. ■STMicroe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
TIP115 | PNP SILICON POWER DARLINGTONS PLASTICPOWERTRANSISTORS IntendedforuseinMediumPowerLinearandSwitchingApplications | TRSYS Transys Electronics |  | |
TIP115 | Monolithic Construction With Built In Base- Emitter Shunt Resistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-1A(Min.) •LowCollector-EmitterSaturationVoltage •IndustrialUse •ComplementarytoTIP110/111/112 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
TIP115 | PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
| bocaBoca semiconductor corporation 博卡博卡半导体公司 |  | |
TIP115 | PLASTIC POWER TRANSISTORS PLASTICPOWERTRANSISTORS IntendedforuseinMediumPowerLinearandSwitchingApplications TO-220PlasticPackage | TEL TRANSYS Electronics Limited |  | |
TIP115 | Darlington Power Transistors (PNP) Features •Designedforgeneral-purposeamplifierandlowspeedswitchingapplications •RoHSCompliant | TAITRON TAITRON |  | |
TIP115 | Silicon PNP Darlington Power Transistors DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP110/111/112 APPLICATIONS •Forindustrialuse | SAVANTIC Savantic, Inc. |  | |
TIP115 | PNP Epitaxial Silicon Darlington Transistors Features •HighDCCurrentGain:hFE=1000@VCE=4.0V,IC=1.0A(Min.) •LowCollector-EmitterSaturationVoltage •ComplementarytoTIP110/111/112 •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating | MCCMicro Commercial Components 美微科美微科半导体公司 |  | |
TIP115 | Silicon PNP Darlington Power Transistors DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP110/111/112 APPLICATIONS •Forindustrialuse | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
TIP115 | SILICON DARLINGTON POWER TRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyaredesignedforgeneralpurposeamplifierandlow-speedswitchingapplications. NPNcomplementsareTIP110-111-112 CompliancetoRoHS. | COMSET Comset Semiconductor |  | |
TIP115 | PLASTIC POWER TRANSISTORS IntendedforuseinMediumPowerLinearandSwitchingApplications | CDIL CDIL |  | |
TIP115 | PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
TIP115 | Plastic Medium-Power Complementary Silicon Transistor TESTSPECIFICATION PlasticMedium-PowerComplementarySiliconTransistor | FCI Amphenol ICC |  | |
TIP115 | Silicon Power darlington Complementary transistors
| CentralCentral Semiconductor Corp 美国中央半导体 |  | |
TIP115 | PNP Epitaxial Silicon Darlington Transistors | MCCMicro Commercial Components 美微科美微科半导体公司 | | |
TIP115 | Plastic Medium-Power Complementary Silicon Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-P+Darl+Di
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
60V
- 最大电流允许值：
2A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD264,BD698,BD716,BDW24A,BDW54A,BDW64A,
- 最大耗散功率：
50W
- 放大倍数：
β>1000
- 图片代号：
B-10
- vtest：
60
- htest：
999900
- atest：
2
- wtest：
50
产品属性
- 产品编号：
TIP115
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
管件
- 晶体管类型：
PNP - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
2.5V @ 8mA，2A
- 电流 - 集电极截止（最大值）：
2mA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
1000 @ 1A，4V
- 工作温度：
150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-220-3
- 供应商器件封装：
TO-220-3
- 描述：
TRANS PNP DARL 60V 2A TO220-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
23+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ST/意法 |
21+ |
NA |
3500 |
只做原装,假一罚十 |
询价 | ||
STM |
21+ |
TO-220-3 |
2000 |
原装正品 有挂有货 |
询价 | ||
STM |
13+/21+ |
1000 |
TO-220-3 |
询价 | |||
ST/意法半导体 |
22+ |
TO-220-3 |
6003 |
原装正品现货 可开增值税发票 |
询价 | ||
STM |
23+ |
TO-220-3 |
1000 |
原装现货支持送检 |
询价 | ||
ST/意法半导体 |
TO-220-3 |
6000 |
询价 | ||||
ST/意法半导体 |
2023 |
TO-220-3 |
6000 |
公司原装现货/支持实单 |
询价 | ||
ST/意法 |
24+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
TI |
05+ |
原厂原装 |
5001 |
只做全新原装真实现货供应 |
询价 |
