丝印：TIP31C；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Medium Power Linear Switching Applications

文件：1.59413 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Complement to TIP32. Applications Medium power linear switching applications.

文件：1.10769 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Medium Power Linear Switching Applications

文件：382.4 Kbytes 页数：2 Pages

FS

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The TIP31A and TIP31C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. The complementary PNP types are TIP32A and TIP32C respectively. Also TIP32B is a PNP type.

文件：118.55 Kbytes 页数：4 Pages

SYC

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: TIP31: 40 V TIP31A: 60 V TIP31B: 80 V TIP31C: 100 V Ope

文件：58.47 Kbytes 页数：1 Pages

TEL

High Power Bipolar Transistor

Features: • Collector-Emitter sustaining voltage - VCEO(sus) = 60V (Min.) - TIP31A, TIP32A = 100V (Min.) - TIP31C, TIP32C • Collector-Emitter saturation voltage - VCE(sat) = 1.2V (Max.) at IC = 3A • Current gain-bandwidth product fT = 3MHz (Min.) at IC = 500mA

文件：419.39 Kbytes 页数：5 Pages

MULTICOMP

易络盟

Silicon NPN Power Transistors

1. With TO-220C package 2. Complement to type TIP32/32A/32B/32C APPLICATIONS 1. Medium power linear switching applications

文件：162.81 Kbytes 页数：4 Pages

ISC

无锡固电

isc Silicon NPN Power Transistors

1. With TO-220C package 2. Complement to type TIP32/32A/32B/32C APPLICATIONS 1. Medium power linear switching applications

文件：292.74 Kbytes 页数：2 Pages

ISC

无锡固电

COMPLEMENTARY SILICON POWER TRANSISTORS

文件：43.04 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features • Col lector-Emitter Saturation Voltage VcE(sat) = 1-2 Vdc (Max) @ Ic = 3.0 Adc • Collector-Emitter Sustaining Voltage - VCEO(SUS) = 40 Vdc (Min) - T1P31,

文件：92.6 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司