COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The TIP31A and TIP31C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. The complementary PNP types are TIP32A and TIP32C respectively. Also TIP32B is a PNP type.

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SYC

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: TIP31: 40 V TIP31A: 60 V TIP31B: 80 V TIP31C: 100 V Ope

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TEL

东电电子

High Power Bipolar Transistor

Features: • Collector-Emitter sustaining voltage - VCEO(sus) = 60V (Min.) - TIP31A, TIP32A = 100V (Min.) - TIP31C, TIP32C • Collector-Emitter saturation voltage - VCE(sat) = 1.2V (Max.) at IC = 3A • Current gain-bandwidth product fT = 3MHz (Min.) at IC = 500mA

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MULTICOMP

易络盟

Si-Epitaxial PlanarTransistors

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Diotec

德欧泰克

Silicon NPN Power Transistors

Features • The Complementary PNP Types are the TIP32 Respectively • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates RoHS Compliant. See Orderi

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MCC

TRIPLE DIFFUSED NPN TRANSISTOR(GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Complementary to TIP32C.

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KEC

KEC(Korea Electronics)

PLASTIC POWER TRANSISTORS

Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers

文件：321.89 Kbytes 页数：4 Pages

CDIL

NPN Epitaxial Silicon Transistor

Features • Medium Power Linear Switching Applications • Complementary to TIP32 Series

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

POWER TRANSISTORS COMPLEMENTARY SILICON

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

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ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

文件：123.98 Kbytes 页数：6 Pages

ONSEMI

安森美半导体