TO-220-3L Plastic-Encapsulate Transistors

文件：2.10193 Mbytes 页数：3 Pages

JIANGSU

长电科技

NPN Epitaxial Silicon Transistor

文件：279.75 Kbytes 页数：4 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

TO-220 - Power Transistors and Darlingtons

文件：76.15 Kbytes 页数：3 Pages

RECTRON

丽正国际

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

文件：196.59 Kbytes 页数：1 Pages

DCCOM

道全

Silicon NPN Power Transistors

文件：118.26 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Power Transistors

Features • The Complementary PNP Types are the TIP32 Respectively • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates RoHS Compliant. See Orderi

文件：190.48 Kbytes 页数：2 Pages

MCC

TRIPLE DIFFUSED NPN TRANSISTOR(GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Complementary to TIP32CF.

文件：356.59 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

文件：123.98 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

文件：85.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

PLASTIC POWER TRANSISTORS

Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers

文件：321.89 Kbytes 页数：4 Pages

CDIL