Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

文件：123.98 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32 = 60 Vdc (Min) − TI

文件：85.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

NPN EXPITAXIAL PLANAR TRANSISTOR

文件：176.43 Kbytes 页数：3 Pages

UTC

友顺

NPN EXPITAXIAL PLANAR TRANSISTOR

文件：176.43 Kbytes 页数：3 Pages

UTC

友顺

NPN EXPITAXIAL PLANAR TRANSISTOR

文件：176.43 Kbytes 页数：3 Pages

UTC

友顺

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 100V 3A TO220

ONSEMI

安森美半导体