互补高功率晶体管

The devices are manufactured in planar technology with \\\"base island\\\" layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. • Low collector-emitter saturation voltage \n• Complementary NPN-PNP transistors;

ST

意法半导体

Complementary power transistors

Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN-PNP transistors

文件：202.5 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Package：TO-3P-3，SC-65-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 100V 25A TO3P

STMICROELECTRONICS

意法半导体

ST/意法
TO-247

ST/意法

上传：深圳庞田科技有限公司

MOT/仁懋
TO-3PN

MOT/仁懋

上传：深圳广友电子有限公司