Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145/146/147

文件：52.23 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA

文件：217.86 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SILICON PLANAR DARLINGTON POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Frequency Switching Applications TO- 3PN Non Isolated Plastic Package

文件：327.1 Kbytes 页数：3 Pages

CDIL

POWER TRANSISTORS(10A,60-100V,125W)

文件：204.6 Kbytes 页数：4 Pages

MOSPEC

统懋

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

文件：234.87 Kbytes 页数：6 Pages

Motorola

摩托罗拉

NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS

NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS They are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in TO-3PN plastic packtage. They are intended for use in power linear and switching application. The complementary are TIP145, TIP146, TIP14

文件：74.45 Kbytes 页数：3 Pages

COMSET

SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS

TIP140 TIP141 TIP142 --> NPN TIP145 TIP146 TIP147 --> PNP DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP140, TIP145 series types are Complementary Silicon Power Darlington Transistors manufactured by the epitaxial base process, designed for general purpose amplifier and low speed switching

文件：269.97 Kbytes 页数：2 Pages

Central

POWER DARLINGTONS

DESCRIPTION The TIP140, TIP141, TIP142 are silicon epitaxial base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic package. They are i ntended for use in power linear and switching applications. The complementary PNP types are the T1P145, TIP146, TIP147 res

文件：83.89 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP145, TIP146 and TIP147 ● 125 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A

文件：139.77 Kbytes 页数：6 Pages

POINN

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3PN package • DARLINGTON • High DC current gain • Complement to type TIP145/146/147 APPLICATIONS • Designed for general–purpose amplifier and low frequency switching applications.

文件：165.83 Kbytes 页数：4 Pages

SAVANTIC