型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
POWER TRANSISTORS(10A,60-100V,80W) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP 文件:204.61 Kbytes 页数:4 Pages | MOSPEC 统懋 | MOSPEC | ||
Silicon NPN Darlington Power Transistor Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T 文件:80.07 Kbytes 页数:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
NPN Epitaxial Silicon Darlington Transistor Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T 文件:69.96 Kbytes 页数:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
SILICON PLANAR POWER DARLINGTON TRANSISTORS SILICON PLANAR POWER DARLINGTON TRANSISTORS For use in Power Linear and Switching Applications 文件:415.68 Kbytes 页数:3 Pages | CDIL | CDIL | ||
Monolithic Construction With Built In Base-Emitter Shunt Resistors Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 2V, IC= 5A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP145/146/147 文件:571.15 Kbytes 页数:5 Pages | SEMIHOW | SEMIHOW | ||
SILICON PLANAR POWER DARLINGTON TRANSISTORS SILICON PLANAR POWER DARLINGTON TRANSISTORS For use in Power Linear and Switching Applications 文件:161.2 Kbytes 页数:2 Pages | TEL 东电电子 | TEL | ||
NPN Epitaxial Silicon Darlington Transistor Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T 文件:294.33 Kbytes 页数:4 Pages | SYC | SYC | ||
Silicon NPN transistor in a TO-220 Plastic Package. Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Monolithic construction with built in base-emitter shunt resistors, High DC current gain complement to TIP147T. Applications Linear and switching industrial equipment. 文件:304.26 Kbytes 页数:2 Pages | FOSHAN 蓝箭电子 | FOSHAN | ||
Darlington TRANSISTOR (NPN) Features Monolithic construction with builtin base-emitter shunt resistors High DC current gain complement to TIP147T. Applications Linear and switching industrial equipment. 文件:632.39 Kbytes 页数:3 Pages | FS | FS | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Monolithic Darlington configuration ■ 文件:53.91 Kbytes 页数:4 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
产品属性
- 产品编号:
TIP142
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
散装
- 晶体管类型:
NPN - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
3V @ 40mA,10A
- 电流 - 集电极截止(最大值):
2mA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
1000 @ 5A,4V
- 工作温度:
-65°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-247-3
- 供应商器件封装:
TO-247-3
- 描述:
TRANS NPN DARL 100V 10A TO247-3
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
TO-247 |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ST/FSC |
25+ |
TO-247218 |
45000 |
ST/FSC全新现货TIP142即刻询购立享优惠#长期有排单订 |
询价 | ||
STM |
21+/22+ |
142110 |
TO-247-3 |
询价 | |||
ST |
22+ |
T0220-3 |
34365 |
原装正品,实单请联系 |
询价 | ||
ST |
23+ |
TO-247 |
96000 |
一级分销商 |
询价 | ||
STM |
23+ |
TO-247-3 |
60000 |
原装现货支持送检 |
询价 | ||
ST专家 |
2021+ |
TO-247 |
6800 |
原厂原装,欢迎咨询 |
询价 | ||
ST/意法 |
2410+ |
TO-247 |
2000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
询价 | ||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
ST/意法 |
24+ |
TO-247 |
10000 |
只做原装 |
询价 |
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