SILICON PLANAR POWER DARLINGTON TRANSISTORS

SILICON PLANAR POWER DARLINGTON TRANSISTORS For use in Power Linear and Switching Applications

文件：415.68 Kbytes 页数：3 Pages

CDIL

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

文件：204.61 Kbytes 页数：4 Pages

MOSPEC

统懋

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= 5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) • Complement to Type TIP147T APPLICATIONS • Designed for general purpose amplifier and low speed switching applications.

文件：111.12 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Darlington Power Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T

文件：80.07 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN Epitaxial Silicon Darlington Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T

文件：69.96 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 2V, IC= 5A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP145/146/147

文件：571.15 Kbytes 页数：5 Pages

SEMIHOW

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Monolithic Darlington configuration ■

文件：53.91 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Monolithic construction with built in base-emitter shunt resistors, High DC current gain complement to TIP147T. Applications Linear and switching industrial equipment.

文件：304.26 Kbytes 页数：2 Pages

FOSHAN

蓝箭电子

Darlington TRANSISTOR (NPN)

Features Monolithic construction with builtin base-emitter shunt resistors High DC current gain complement to TIP147T. Applications Linear and switching industrial equipment.

文件：632.39 Kbytes 页数：3 Pages

FS

NPN Epitaxial Silicon Darlington Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T

文件：294.33 Kbytes 页数：4 Pages

SYC