Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3PN package • DARLINGTON • High DC current gain • Complement to type TIP145/146/147 APPLICATIONS • Designed for general–purpose amplifier and low frequency switching applications.

文件：165.83 Kbytes 页数：4 Pages

SAVANTIC

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN)

HIGH DC CURRENT GAIN • Complementary to TIP145/146/147

文件：24.11 Kbytes 页数：2 Pages

WINGS

永盛电子

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP140, TIP141 and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP145, TIP146 and TI

文件：48.21 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

DESCRIPTION The TIP140, TIP141 and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP145, TIP146 and TI

文件：166.44 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

TO-247 Plastic-Encapsulate Transistors

Features ■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment

文件：1.24641 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

Monolithic Construction With Built In Base- Emitter Shunt Resistors

文件：104.38 Kbytes 页数：4 Pages

SYC

NPN SILICON POWER DARLINGTONS

文件：92.99 Kbytes 页数：4 Pages

Bourns

伯恩斯

Darlington Complementary Silicon Power Transistors

文件：91.24 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc Silicon NPN Darlington Power Transistor

文件：314.16 Kbytes 页数：2 Pages

ISC

无锡固电

10 A，100 V，NPN 达林顿双极功率晶体管

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low frequency switching applications. The TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) are complementary devices. • High DC Current Gain Min hFE = 1000 @ IC= 5 A, VCE = 4 V\n• Collector-Emitter Sustaining Voltage @ 30 mAVCEO(sus) = 60 Vdc (Min) TIP140, TIP145 VCEO(sus) = 80 Vdc (Min)TIP141, TIP146VCEO(sus) = 100 Vdc (Min)TIP142, TIP147\n• Monolithic Construction with Built-In Base-Emitter Shunt Resistor\n• Pb-F;

ONSEMI

安森美半导体