isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.5A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.41 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFET DPAK, TO-220FP, TO-220, IPAK

Features ■ 100 avalanche tested ■ Extremely high dv/dt capability ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Application Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology t

文件：1.19252 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.09044 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.5A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.73 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650V (D-S) Power MOSFET

文件：977.22 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFET DPAK, TO-220FP, TO-220, IPAK

Features ■ 100 avalanche tested ■ Extremely high dv/dt capability ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Application Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology t

文件：1.19252 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体