N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET??II POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

文件：472.69 Kbytes 页数：11 Pages

STMICROELECTRONICS

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Isc N-Channel MOSFET Transistor

文件：317.62 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 60V - 0.012廓 - 60A - TO-220/D2PAK/TO-220FP STripFET??II Power MOSFET

文件：516.52 Kbytes 页数：16 Pages

STMICROELECTRONICS

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N-Channel 60-V (D-S) MOSFET

文件：981.29 Kbytes 页数：7 Pages

VBSEMI

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N-Channel MOSFET uses advanced trench technology

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DOINGTER

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N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET??II POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

文件：472.69 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.014Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.53 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

文件：337.12 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.012廓 - 60A - TO-220/D2PAK/TO-220FP STripFET??II Power MOSFET

文件：516.52 Kbytes 页数：16 Pages

STMICROELECTRONICS

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N沟道60 V、0.012 Ohm典型值、60 A STripFET(TM) II功率MOSFET，TO-220封装

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is • Exceptional dv/dt capability \n• Application oriented characterization \n• 100% avalanche tested \n• Low threshold drive \n• 175˚C operating range;

ST

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