isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 32mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.42 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 120V - 0.028W - 40A TO-220 LOW GATE CHARGE STripFET??II POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

文件：283.58 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 120V - 0.028 Ohm 40A TO-220 LOW GATE CHARGE STripFET™II POWER MOSFET

• Exceptional dv/dt capability\n• Application oriented characterization• 100% avalanche tested;

ST

意法半导体

TO220

ST

上传：深圳市纳艾斯科技有限公司

TO-220

ST

上传：深圳市瑞卓芯科技有限公司