isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.8 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 800 V, 2.8 廓 typ., 2.5 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.60007 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 2.8 Ohm typ., 2.5 A MDmesh K5 Power MOSFET in TO-220 package

这款超高压N-沟道功率MOSFETs 采用MDmesh™ K5技术进行设计。该技术以创新专有的垂直工艺为基础。因此，在要求高功率密度和高效率的应用中，导通电阻显著降低，并具有极低的栅极电荷。\n • 业界领先的低RDS(on) x 面积\n• 业界出色的品质因数（FoM）\n• 极低的栅极电荷• 经过100％雪崩测试\n• 稳压保护;

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.5A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.54 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 800 V, 2.8 廓 typ., 2.5 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.60007 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体