isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 45mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

N-channel 200V - 0.038廓 -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. ■ Gate charge minimi

文件：480.67 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N沟道200V - 0.038Ohm -40A- D2PAK/TO-220/TO-220FP/TO-247

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. • Gate charge minimized \n• Very good manufacturing repeatability \n• Very low intrinsic capacitances \n• 100% avalanche tested \n• Excellent figure of merit (RDS*Qg);

ST

意法半导体

isc N-Channel MOSFET Transistor

文件：347.55 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 200V - 0.038廓 -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. ■ Gate charge minimi

文件：480.67 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体