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STW40NF20

N-channel 200V - 0.038廓 -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET??Power MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters. ■Gatechargeminimi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STW40NF20

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISF40NF20

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent–ID=40A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max) ·FastSwitchingSpeed ·LowDriveRequirement ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB40NF20

N-channel200V-0.038廓-40A-D2PAK/TO-220/TO-220FP/TO-247LowgatechargeSTripFET??PowerMOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters. ■Gatechargeminimi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STB40NF20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=45mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF40NF20

N-channel200V-0.038廓-40A-D2PAK/TO-220/TO-220FP/TO-247LowgatechargeSTripFET??PowerMOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters. ■Gatechargeminimi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STF40NF20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=45mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP40NF20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=45mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP40NF20

N-channel200V-0.038廓-40A-D2PAK/TO-220/TO-220FP/TO-247LowgatechargeSTripFET??PowerMOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters. ■Gatechargeminimi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    STW40NF20

  • 功能描述:

    MOSFET Low charge STripFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
STMicroelectronics
24+
TO-247-3
30000
晶体管-分立半导体产品-原装正品
询价
ST
24+
TO-247
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
ST
23+
TO247
6996
只做原装正品现货
询价
ST/意法半导体
22+
TO-247-3
6001
原装正品现货 可开增值税发票
询价
STM
23+
TO-247-3
1200
原装现货支持送检
询价
ST/意法
17+
TO247
31518
原装正品 可含税交易
询价
ST(意法半导体)
24+
TO-247
7814
支持大陆交货,美金交易。原装现货库存。
询价
ST
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
ST(意法)
2450
TO-247AC
8998
ST原厂原装正品一手货源可全线定货
询价
ST
24+
TO-247-3
213
询价
更多STW40NF20供应商 更新时间2025-5-5 14:14:00