N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFET??POWER MOSFET

DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable

文件：114.64 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：319.09 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 60 V, 0.023 廓, 38 A TO-220, D2PAK STripFETTM II Power MOSFET

文件：362.11 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件：1.31576 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件：1.10185 Mbytes 页数：3 Pages

DOINGTER

杜因特

N沟道60 V、0.22 Ohm典型值、38 A STripFET(TM) II功率MOSFET，TO-220封装

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu • Typical RDS(on)= 0.022 Ω \n• Exceptional dv/dt capability \n• 100% avalanche tested \n• Standard threshold drive;

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 38A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.4 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 60V - 0.022ohm - 38A TO-220 / D2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a rem

文件：441.41 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体