丝印：P6NK60Z；Package：TO-220；N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：578.48 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 1廓 - 6A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH??Power MOSFET

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：558.59 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：P6NK60Z；Package：TO-220；N-channel 600 V - 1 廓 - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH??Power MOSFET

文件：444.64 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-Channel 600V (D-S)Power MOSFET

文件：1.08438 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件：322.1 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：P6NK60ZFP；Package：TO-220FP；N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：578.48 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 1廓 - 6A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH??Power MOSFET

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：558.59 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：P6NK60ZFP；Package：TO-220FP；N-channel 600 V - 1 廓 - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH??Power MOSFET

文件：444.64 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-Channel MOSFET Transistor

文件：195.86 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道600 V - 1 Ohm - 6 A - TO-220有齐纳管保护的SuperMESH(TM) 功率MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalanche tested;

ST

意法半导体