丝印：P6NK90Z；Package：TO-220；N-channel 900V - 1.56 - 5.8A Zener-protected SuperMESH Power MOSFET

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a h

文件：483.55 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：320.2 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 900V - 1.56廓 - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH??Power MOSFET

文件：483.55 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：P6NK90ZFP；Package：TO-220FP；N-channel 900V - 1.56 - 5.8A Zener-protected SuperMESH Power MOSFET

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a h

文件：483.55 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 900V - 1.56廓 - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH??Power MOSFET

文件：483.55 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 900V - 1.56廓 - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH??Power MOSFET

文件：483.55 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：314.66 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道900 V、1.56 Ohm典型值、5.8 A SuperMESH功率MOSFET，TO-220封装

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalanche tested \n• Very good manufacturing repeatability \n• Very low intrinsic capacitances;

ST

意法半导体

N沟道900 V、1.56 Ohm典型值、5.8 A SuperMESH功率MOSFET，TO-220FP封装

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalanche tested \n• Very good manufacturing repeatability \n• Very low intrinsic capacitances;

ST

意法半导体