丝印：42N65M5；Package：TO-220；N-channel 650 V, 0.070 ?? 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247

Description MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silic

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STMICROELECTRONICS

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N-channel 650 V, 0.070 廓, 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247

Description MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silic

文件：1.10111 Mbytes 页数：18 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.070 ohm, 33 A MDmesh V Power MOSFET

文件：1.10667 Mbytes 页数：18 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

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ISC

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N沟道650 V、0.070 Ohm典型值、33 A MDmesh M5功率MOSFET，TO-220封装

MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power • 100% avalanche tested \n• TO-220 worldwide best RDS(on) \n• High dv/dt capability \n• Higher VDSS rating \n• Easy to drive \n• Excellent switching performance;

ST

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