N沟道1050 V、2.9 Ohm典型值、3 A MDmesh K5功率MOSFET，TO-220封装

This N-channel Zener-protected Power MOSFET is designed using ST’s revolutionary avalanche-rugged very high voltage MDmesh™ K5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which requ • Worldwide best FOM (figure of merit) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

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丝印：5N105K5；Package：TO-220；N-channel 1050 V, 2.9 廓 typ., 3 A MDmesh??K5 Power MOSFET in a TO-220 package

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STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 1050V(Min) -RDS(on) = 3.5Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Switching applications

文件：692.44 Kbytes 页数：14 Pages

STMICROELECTRONICS

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