isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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无锡固电

N-channel 600 V - 0.150 廓 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh??Power MOSFET

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STMICROELECTRONICS

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N-channel 600 V, 0.150 廓, 19.5 A, FDmesh??II Power MOSFET (with fast diode) D짼PAK, I짼PAK, TO-220, TO-220FP, TO-247

文件：820.53 Kbytes 页数：18 Pages

STMICROELECTRONICS

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N-channel 600 V - 0.150 廓 - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh??II Power MOSFET

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STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

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ISC

无锡固电

N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh II Power MOSFET (with fast diode) TO-220

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal f The worldwide best R\nDS(on)* area amongst the fast recovery diode devices\n100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance\nHigh dv/dt and avalanche capabilities;

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意法半导体