isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.04Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.45 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：P36NF06；Package：TO-220FP；N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：310 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET

文件：336.79 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.09 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件：1.31583 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel 60V - 0.032ohm - 30A - TO-220 - D2PAK STripFET TM II Power MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：436.66 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体