isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 180A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) =2.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

3 kW Full Bridge LLC resonant digital power supply evaluation kit

Features • Power ratings: – input DC voltage: 375 V to 425 V – output voltage: 48 V – maximum output current: 62.5 A – output power: 3 kW – peak efficiency: 95.3% – HF transformer isolation voltage: 4 kV • Resonant and switching frequencies: – max DC-DC switching frequency: 380 kHz (a

文件：4.98217 Mbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

N-Channel MOSFET uses advanced trench technology

文件：1.00324 Mbytes 页数：4 Pages

DOINGTER

杜因特

丝印：310N10F7；Package：TO-220；N-channel 100 V, 2.3 m廓 typ., 180 A STripFET??VII DeepGATE?? Power MOSFET in a TO-220 package

文件：824.74 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N沟道100 V、2.3 mOhm典型值、180 A STripFET F7功率MOSFET，TO-220封装

该器件使用ST专有的STripFET™技术的第七代设计规则，具有新的栅极结构。因而，功率MOSFET在不同封装中都能呈现最低的RDS(on)。 • 超低导通电阻 \n• 经过100％雪崩测试;

ST

意法半导体