丝印：GP7NB60M；Package：TO-220；N-CHANNEL 7A - 600V TO-220 / DPAK PowerMESH™ IGBT

n HIGH INPUT IMPEDANCE n LOW ON-VOLTAGE DROP (Vcesat) n OFF LOSSES INCLUDE TAIL CURRENT n LOW GATE CHARGE n HIGH CURRENT CAPABILITY n HIGH FREQUENCY OPERATION n CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE DESCRIPTION Using the latest high voltage technology based on a patented str

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STMICROELECTRONICS

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N-CHANNEL 600V - 1.0 廓 - 7.2A TO-220/TO-220FP PowerMESH??MOSFET

文件：271.3 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

文件：115.5 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.1A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.15 Kbytes 页数：2 Pages

ISC

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