丝印：GP7NC60H；Package：TO-220；N-channel PowerMESH™ 600 V, 14 A very fast IGBT

Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features  Low on-vo

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意法半导体

N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT

文件：367.89 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel PowerMESH™ 600 V, 14 A very fast IGBT

Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features  Low on-vo

文件：794.93 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：GP7NC60HD；Package：TO-220；N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT

General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER

文件：430.39 Kbytes 页数：15 Pages

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丝印：GP7NC60HD；Package：TO-220；N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o

文件：1.36326 Mbytes 页数：22 Pages

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意法半导体

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 25A 80W TO220

STMICROELECTRONICS

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N沟道14 A、600 V超快IGBT，带超高速二极管

These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. • Low on-voltage drop (VCE(sat)) \n• Off losses include tail current \n• Losses include diode recovery energy \n• High frequency operation up to 70 kHz \n• Very soft ultra fast recovery anti parallel diode;

ST

意法半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 25A 80W TO220

STMICROELECTRONICS

意法半导体