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STGP7NC60H

丝印:GP7NC60H;Package:TO-220;N-channel PowerMESH™ 600 V, 14 A very fast IGBT

Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features  Low on-vo

文件:794.93 Kbytes 页数:14 Pages

STMICROELECTRONICS

意法半导体

STGP7NC60HD

丝印:GP7NC60HD;Package:TO-220;N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT

General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER

文件:430.39 Kbytes 页数:15 Pages

STMICROELECTRONICS

意法半导体

STGP7NC60HD

丝印:GP7NC60HD;Package:TO-220;N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o

文件:1.36326 Mbytes 页数:22 Pages

STMICROELECTRONICS

意法半导体

GP7NC60H

N-channel PowerMESH™ 600 V, 14 A very fast IGBT

Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features  Low on-vo

文件:794.93 Kbytes 页数:14 Pages

STMICROELECTRONICS

意法半导体

GP7NC60HD

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o

文件:1.36326 Mbytes 页数:22 Pages

STMICROELECTRONICS

意法半导体

详细参数

  • 型号:

    GP7NC60H

  • 功能描述:

    IGBT 晶体管 V-FAST POWERMESH

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集电极—发射极最大电压

  • VCEO:

    650 V

  • 集电极—射极饱和电压:

    2.3 V

  • 栅极/发射极最大电压:

    20 V 在25

  • C的连续集电极电流:

    150 A

  • 栅极—射极漏泄电流:

    400 nA

  • 功率耗散:

    187 W

  • 封装/箱体:

    TO-247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST
24+
TO-220-3
1908
询价
ST
17+
TO-220
6200
询价
ST全系列
25+23+
TO-220
26726
绝对原装正品全新进口深圳现货
询价
STM
1809+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!
询价
22+
NA
1448
加我QQ或微信咨询更多详细信息,
询价
ST
22+
TO220AB
9000
原厂渠道,现货配单
询价
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
STMicroelectronics
2022+
TO-220AB
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
ST
23+
TO220AB
8000
只做原装现货
询价
ST意法
N/A
21+
569888
原装正品现货 支持BOM配单!
询价
更多GP7NC60H供应商 更新时间2025-9-21 15:30:00