丝印：G15H120F2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the improved H series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of high frequency co

文件：801.85 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the improved H series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of high frequency converters. Furthermore • Maximum junction temperature: TJ= 175 °C\n• High speed switching series\n• Minimized tail current\n• VCE(sat)= 2.1 V (typ.) @ IC= 15 A• 5 μs minimum short-circuit withstand time at TJ=150 °C\n• Safe paralleling\n• Low thermal resistance;

ST

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT H-SERIES 1200V 15A TO-247

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the improved H series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of high frequency co

文件：801.85 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体