沟槽栅场截止IGBT，M系列，650 V、10 A，低损耗

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, • 6 µs of short-circuit withstand time \n• VCE(sat) = 1.55 V (typ.) @ IC = 10 A \n• Tight parameter distribution \n• Safer paralleling \n• Positive VCE(sat) temperature coefficient \n• Low thermal resistance \n• Soft and very fast recovery antiparallel diode \n• Maximum junction temperature: TJ = 17;

ST

意法半导体

Trench gate field-stop IGBT, M series 650 V, 10 A low loss

文件：928.21 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：TRENCH GATE FIELD-STOP IGBT M SE

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

文件：1.14052 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, M series 650 V, 10 A low loss

文件：1.12648 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

文件：1.14052 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体