Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

文件：1.14052 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：G10M65DF2；Package：D2PAK；Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

文件：1.14052 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：G10M65DF2；Package：TO-220FP；Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220FP package

文件：989.1 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, M series 650 V, 10 A low loss

文件：1.12648 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

文件：1.14052 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220FP package

文件：989.1 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体