丝印：G110N06；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G110N06TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.24523 Mbytes 页数：6 Pages

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谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT110N06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：983.22 Kbytes 页数：6 Pages

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谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT110N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06818 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT110N06SH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：943.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体