G10M65DF2中文资料意法半导体数据手册PDF规格书

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series

IGBTs, which represent an optimal balance

between inverter system performance and

efficiency where low-loss and short-circuit

functionality are essential. Furthermore, the

positive VCE(sat) temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

Features

 6 µs of short-circuit withstand time

 VCE(sat) = 1.55 V (typ.) @ IC = 10 A

 Tight parameter distribution

 Safer paralleling

 Positive VCE(sat) temperature coefficient

 Low thermal resistance

 Soft and very fast recovery antiparallel diode

 Maximum junction temperature: TJ = 175 °C

Applications

 Motor control

 UPS

 PFC

 General purpose inverter