丝印：G15S120DF3；Package：TO-247；Trench gate field-stop IGBT, S series 1200 V, 15 A low drop

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat) temperature coeffici

文件：741.12 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, S series 1200 V, 15 A low drop

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat)temperature coefficient and tight paramete 10 μs of short-circuit withstand time\nV\nCE(sat)= 1.55 V (typ.) @ I\nC= 15 A\nTight parameter distribution\nSafer paralleling\nLow thermal resistance\nSoft and fast recovery antiparallel diode;

ST

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 15A TO247

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, S series 1200 V, 15 A low drop

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat) temperature coeffici

文件：741.12 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体