650 V、30 A高速沟槽栅场截止HB系列IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the • Maximum junction temperature: TJ = 175 °C \n• High speed switching series \n• Minimized tail current \n• VCE(sat) = 1.55 V (typ.) at IC = 30 A \n• Tight parameters distribution \n• Safe paralleling \n• Low thermal resistance;

ST

意法半导体

丝印：GW30H65FB；Package：TO-247；Trench gate field-stop IGBT, HB series 650 V, 30 A high speed

文件：1.69367 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 30A 260W TO-247

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, HB series 650 V, 30 A high speed

文件：1.69367 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体