N-channel 600V - 6A - DPAK / D2PAK / TO-220 / TO-220FP Hyper fast IGBT

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600 V - 6 A hyper fast IGBT

文件：523.59 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

6 A, 600 V hyper fast IGBT

文件：645.32 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

6A, 600 V hyper fast IGBT with very fast diode

This series of hyper fast IGBT is based on PowerMESH technology and exhibits very low turn-off energy, thanks to a new lifetime control system. This results in an optimized trade-off between on-state voltage and switching losses, allowing very high operating frequencies.\n • Low CRES / CIESratio (no cross-conduction susceptibility)• Very soft ultra fast recovery antiparallel diode;

ST

意法半导体

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 14A 56W TO220

STMICROELECTRONICS

意法半导体

6 A, 600 V hyper fast IGBT with Ultrafast diode

• Low CRES / CIES ratio (no cross-conduction susceptibility)\n• Very soft ultrafast recovery antiparallel diode• Very high frequency operation;

ST

意法半导体

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 14A 56W TO-220

STMICROELECTRONICS

意法半导体