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STP7NB60

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP7NB60

N-CHANNEL 600V - 1.0 廓 - 7.2A TO-220/TO-220FP PowerMESH??MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP7NB60FP

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP7NB60_07

N-CHANNEL 600V - 1.0 廓 - 7.2A TO-220/TO-220FP PowerMESH??MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP7NB60FP

N-CHANNEL 600V - 1.0 廓 - 7.2A TO-220/TO-220FP PowerMESH??MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GB7NB60KD

N-CHANNEL7A-600V-TO-220/TO-220FP/D2PAKSHORTCIRCUITRATEDPowerMESHTMIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GD7NB60K

N-channel600V-7A-TO-220/DPAKShortcircuitratedPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GD7NB60K

N-channel600V-7A-TO-220/DPAKShortcircuitratedPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GF7NB60SL

N-CHANNEL7A-600V-TO-220FPPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GP7NB60F

N-CHANNEL7A-600V-T0-220/DPAKPowerMESHIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperfomances.ThesuffixFidentifiesafamilyoptimizedtoachieveverylowswitchingswitchingtimesfor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GP7NB60K

N-channel600V-7A-TO-220/DPAKShortcircuitratedPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GP7NB60K

N-channel600V-7A-TO-220/DPAKShortcircuitratedPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GP7NB60KD

N-CHANNEL7A-600V-TO-220/TO-220FP/D2PAKSHORTCIRCUITRATEDPowerMESHTMIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GP7NB60KDFP

N-CHANNEL7A-600V-TO-220/TO-220FP/D2PAKSHORTCIRCUITRATEDPowerMESHTMIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

P7NB60

N-CHANNELENHANCEMENTMODEPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB7NB60

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STB7NB60

N-CHANNEL600V-1.0OMH-7.2A-I2PAK/D2PAKPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGB7NB60FD

N-CHANNEL7A-600VTO-220/D2PAKPowerMESHIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperfomances.ThesuffixFidentifiesafamilyoptimizedtoachieveverylowswitchingswitchingtimesfor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGB7NB60HD

N-CHANNEL7A-600VDPAKPowerMESHIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESHIGBTs,withoutstandingperfomances.Thesuffix”H”identifiesafamilyoptimizedtoachieveverylowswitchingtimesforhighfrequ

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGB7NB60KD

N-CHANNEL7A-600V-TO-220/TO-220FP/D2PAKSHORTCIRCUITRATEDPowerMESHTMIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    STP7NB60

  • 功能描述:

    MOSFET N-Ch 600 Volt 7.2 A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST
06+
TO-220
10000
自己公司全新库存绝对有货
询价
ST
N/A
2000
询价
ST
23+
TO220
5000
原装正品,假一罚十
询价
ST
17+
TO-220
15000
原装现货热卖
询价
ST
23+
TO-220
8795
询价
ST品牌
2016+
TO-220
6528
房间原装进口现货假一赔十
询价
ST
2017+
TO-220
25689
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
ST
16+
TO-220
10000
全新原装现货
询价
ST
2020+
TO-220
350000
100%进口原装正品公司现货库存
询价
ST
22+
TO-220
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
更多STP7NB60供应商 更新时间2024-5-16 17:16:00