Very High Speed IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)= 2.14V@IC= 48A · Low Switching Losses · Ultra Low VF Hyperfast Diode APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC · High Voltage Auxiliaries

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ISC

无锡固电

Low thermal resistance

文件：2.09008 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

600 V, 20 A very high speed trench gate field-stop IGBT

文件：2.09008 Mbytes 页数：23 Pages

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600 V、20 A超高速沟槽栅场截止V系列IGBT

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the \"V\" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermor • Maximum junction temperature: TJ= 175 °C \n• Very high speed switching series \n• Tail-less switching off \n• Low saturation voltage: VCE(sat)= 1.8 V (typ.) @ IC= 20 A \n• Tight parameters distribution \n• Safe paralleling \n• Low thermal resistance \n• Very fast soft recovery antiparallel diode \;

ST

意法半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 40A 167W TO247

STMICROELECTRONICS

意法半导体