STGW20V60DF数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the \"V\" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

特性 Features

• Maximum junction temperature: TJ= 175 °C
• Very high speed switching series
• Tail-less switching off
• Low saturation voltage: VCE(sat)= 1.8 V (typ.) @ IC= 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
• Lead free package

简介

STGW20V60DF属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGW20V60DF晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。