首页>STGST200G65DFAG>规格书详情
STGST200G65DFAG数据手册ST中文资料规格书
STGST200G65DFAG规格书详情
描述 Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
特性 Features
• AEC-Q101 qualified
• VCE(sat) = 1.52 V (typ.) @ IC = 200 A
• Positive VCE(sat) temperature coefficient
• Tight parameter distribution
• Low thermal resistance
• Very fast and soft recovery antiparallel diode
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
TO2474 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ST/意法 |
24+ |
NA/ |
3590 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法 |
25+ |
TO-3P |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
ST/意法 |
24+ |
TO-3P |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST |
23+ |
STPAK |
12500 |
ST系列在售,可接长单 |
询价 | ||
ST/意法 |
07+ |
TO-247 |
340 |
询价 | |||
ST/意法半导体 |
21+ |
TO-247-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
21+ |
TO-247-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法 |
23+ |
TO-247 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
ST |
25+23+ |
TO-247 |
28815 |
绝对原装正品全新进口深圳现货 |
询价 |
