STGP3NC120HD中文资料7 A、1200 V超快IGBT，带超高速二极管数据手册ST规格书

描述 Description

This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast switching performance. It is designed in PowerMESH™ technology combined with high voltage ultrafast diode.

特性 Features

• High voltage capability
• High speed
• Very soft ultrafast recovery anti-parallel diode

简介

STGP3NC120HD属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGP3NC120HD晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。